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APT150DL60B2(G) 600V 150A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
PRODUCT APPLICATIONS
* Anti-Parallel Diode -Switchmode Power Supply -Inverters * Applications - Induction Heating * Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge
PRODUCT FEATURES
* Ultrasoft Recovery Times (trr) * Popular TO-247 Package or Surface Mount D3PAK Package * Ultra Low Forward Voltage * Low Leakage Current
PRODUCT BENEFITS
* Soft Switching - High Qrr * Low Noise Switching - Reduced Ringing * Higher Reliability Systems * Minimizes or eliminates snubber
1
(B2)
T-M ax (R)
2
1
2
1 - Cathode 2 - Anode Back of Case - Cathode
MAXIMUM RATINGS
Symbol
VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ, TSTG TL
All Ratings: TC = 25C unless otherwise specified.
Ratings Unit
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward current
1
600
Volts
(TC = 112C, Duty Cycle = 0.5)
150 450 600 -55 to 175 C 300 Amps
RMS Forward Currrent (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms) Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
IF = 150A VF Forward Voltage IF = 300A IF = 150A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125C 139
Min
Typ
1.25 2.0 1.25
Max
1.6
Unit
Volts
25 250 pF
052-6319 Rev B 12 - 2008
A
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM
APT150DL60B2(G)
Min Typ
51 ns 408 IF = 150A, diF/dt = -200A/s VR = 400V, TC = 25C 2387 13 639 IF = 150A, diF/dt = -200A/s VR = 400V, TC = 125C 7253 21 299 IF = 150A, diF/dt = -1000A/ s VR = 400V, TC = 125C 12075 68 nC Amps ns nC Amps ns nC Amps
Characteristic / Test Conditions
Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C
Max
Unit
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RJC WT
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Min
Typ
Max
0.26
Unit
C/W oz g
0.22 Package Weight 5.9 10 Torque Maximum Mounting Torque 1.1 1 Continuous current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.30 ZJC, THERMAL IMPEDANCE (C/W) 0.25 0.20 0.15
Note:
lb*in N*m
PDM
0.10 0.05 0
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10 10 10 -1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 10-5 10-4
-3 -2
TJ (C)
052-6319 Rev B 12 - 2008
0.099
Dissipated Power (Watts)
TC (C)
0.160
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
0.0160
0.380
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
400 350 IF, FORWARD CURRENT (A) 300 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 TJ= 125C trr, COLLECTOR CURRENT (A) TJ= 55C TJ= 25C TJ= 150C 600 75A 500 400 300 200 100 0 700 150A
APT150DL60B2(G)
T = 125C J V = 400V
R
14000 Qrr, REVERSE RECOVERY CHARGE (nC) 12000 10000
VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage
T = 125C J V = 400V
R
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 80 IRRM, REVERSE RECOVERY CURRENT (A)
T = 125C J V = 400V
R
150A
75A
60
150A
8000 6000 4000 2000 0 300A
75A 40
20
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 200
0
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
150 0.8 0.6 QRR 0.4 50 0.2
Duty cycle = 0.5 TJ = 45C
tRR IF(AV) (A) IRRM 100
0
0 0 25 50 75 100 125 150
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 1400 CJ, JUNCTION CAPACITANCE (pF)
Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
1200 1000 800 600 400 200 0
052-6319 Rev B 12 - 2008
1
10
100
400
VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage
Vr +18V 0V D.U.T. diF /dt Adjust
APT150DL60B2(G)
trr/Qrr Waveform
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
T-MAX(R) [B2] Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098)
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Cathode
20.80 (.819) 21.46 (.845)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
052-6319 Rev B 12 - 2008
Anode
2.21 (.087) 2.59 (.102)
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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